TY - JOUR
T1 - Low-temperature growth of InGaN films over the entire composition range by MBE
AU - Fabien, Chloe A M
AU - Gunning, Brendan P.
AU - Alan Doolittle, W.
AU - Fischer, Alec M.
AU - Wei, Yong O.
AU - Xie, Hongen
AU - Ponce, Fernando
N1 - Funding Information:
This material is based upon work supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA no. EEC-1041895 . Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy , under award number DE-AR0000470 .
Publisher Copyright:
© 2015 Published by Elsevier B.V.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.
AB - The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.
KW - A1. Atomic force microscopy
KW - A1. Crystal structure
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2015.02.014
DO - 10.1016/j.jcrysgro.2015.02.014
M3 - Article
AN - SCOPUS:84979963110
SN - 0022-0248
VL - 425
SP - 115
EP - 118
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -