We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a Zr B2 (0001) buffer layer. The method utilizes the decomposition of a single gas-source precursor (D2 Ga N3) 3 on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of 550 °C with a growth rate of 3 nmmin. The films exhibit intense photoluminescence emission at 10 K with a single peak at 3.48 eV, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on Zr B2 in contrast to conventional metalorganic chemical vapor deposition based approaches.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)