Epitaxial growth of quaternary wide band gap semiconducting SiCAlN films was investigated. The compounds SiC and AlN were synthesized as a single-phase solid solution thin film by molecular beam epitaxy at 750 °. Two models for the hexagonal structure of the films were presented based on first-principles total-energy density functional theory calculations. The models were found in agreement with the experimental microstructures observed by transmission electron microscopy.
|Number of pages
|Physical Review Letters
|Published - May 20 2002
ASJC Scopus subject areas
- General Physics and Astronomy