In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.

Original languageEnglish (US)
Article number7999163
Pages (from-to)1244-1247
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2017


  • Cu
  • PMC
  • RRAM
  • direct tunneling
  • low temperature
  • silica

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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