Abstract
This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.
Original language | English (US) |
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Article number | 7081349 |
Pages (from-to) | 567-569 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2015 |
Keywords
- HfO2
- RRAM
- ReRAM
- conduction mechanism
- hopping
- low temperature
- resistive switching
- variation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering