@inproceedings{b425d1b5f2a840b0954058b2a3e793ab,
title = "Low standby power and robust FinFET based SRAM design",
abstract = "In this paper, we propose low power and robust 6T SRAM cells. The cells are based on the Vt-control of the cross-coupled inverters of the SRAM cell to reduce leakage power when SRAM is in the idle mode. Using the V t-control method along with the built-in feedback leads to increasing the SNM. In comparison to a previous work, our schemes have a higher static noise margin (SNM) and lower standby power consumption. To assess the efficiency of the approach, HSPICE simulations in 45nm and 32nm FinFET technologies are used. The results show considerable improvements in terms of the standby power as well as the hold and read SNM. This suggests that the Vt-control method may be used for realizing low-standby power and robust SRAM.",
keywords = "FinFET, Low-power memory, SRAM, Standby power, Static noise margin, V-control method",
author = "Behzad Ebrahimi and Saeed Zeinolabedmzadeh and Ali Afzali-Kusha",
year = "2008",
month = sep,
day = "22",
doi = "10.1109/ISVLSI.2008.8",
language = "English (US)",
isbn = "9780769531700",
series = "Proceedings - IEEE Computer Society Annual Symposium on VLSI: Trends in VLSI Technology and Design, ISVLSI 2008",
pages = "185--190",
booktitle = "Proceedings - IEEE Computer Society Annual Symposium on VLSI",
note = "IEEE Computer Society Annual Symposium on VLSI: Trends in VLSI Technology and Design, ISVLSI 2008 ; Conference date: 07-04-2008 Through 09-04-2008",
}