Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Jijun He, Ioannis Paradisanos, Tianyi Liu, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, Arslan S. Raja, Clément Javerzac-Galy, Philippe Roelli, Domenico De Fazio, Barbara L.T. Rosa, Sefaattin Tongay, Giancarlo Soavi, Andrea C. Ferrari, Tobias J. Kippenberg

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.

Original languageEnglish (US)
Pages (from-to)2709-2718
Number of pages10
JournalNano Letters
Issue number7
StatePublished - Apr 14 2021


  • MoTe
  • layered materials
  • microresonators
  • photonic integrated circuits
  • silicon nitride
  • transition-metal dichalcogenides

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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