TY - JOUR
T1 - Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes
AU - Ghosh, Subhajit
AU - Mudiyanselage, Dinusha Herath
AU - Rumyantsev, Sergey
AU - Zhao, Yuji
AU - Fu, Houqiang
AU - Goodnick, Stephen
AU - Nemanich, Robert
AU - Balandin, Alexander A.
N1 - Publisher Copyright:
© 2023 Author(s).
PY - 2023/5/22
Y1 - 2023/5/22
N2 - We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.
AB - We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.
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U2 - 10.1063/5.0153495
DO - 10.1063/5.0153495
M3 - Article
AN - SCOPUS:85160593829
SN - 0003-6951
VL - 122
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 21
M1 - 212109
ER -