One of the main concerns in the operation of the modular multilevel converter (MMC), particularly for high-power applications, is its efficiency. SiC-based devices have the potential to provide significant efficiency improvement compared to Si devices. However, the possibility and benefits of using SiC-based devices instead of Si devices for high-power conversion have not been thoroughly explored. This paper reports on the results obtained from a detailed study to evaluate the performance of MMCs based on medium-voltage SiC MOSFETs and diodes with hybrid MMCs that employ Si IGBTs and SiC diodes. The results are based on detailed circuit simulations that use physics-based circuit models.
|Title of host publication
|APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - May 8 2015
|30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 - Charlotte, United States
Duration: Mar 15 2015 → Mar 19 2015
|Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
|30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
|3/15/15 → 3/19/15
ASJC Scopus subject areas
- Electrical and Electronic Engineering