Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Shane Johnson; P. Dowd; W. Braun; U. Koelle; C. M. Ryu; M. Beaudoin; C. Z. Guo; Yong-Hang Zhang

doi:10.1116/1.591423

Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Shane Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

Original language	English (US)
Pages (from-to)	1545-1548
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591423
State	Published - May 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs",

abstract = "Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.",

author = "Shane Johnson and P. Dowd and W. Braun and U. Koelle and Ryu, {C. M.} and M. Beaudoin and Guo, {C. Z.} and Yong-Hang Zhang",

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doi = "10.1116/1.591423",

language = "English (US)",

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pages = "1545--1548",

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T1 - Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

AU - Johnson, Shane

AU - Dowd, P.

AU - Braun, W.

AU - Koelle, U.

AU - Ryu, C. M.

AU - Beaudoin, M.

AU - Guo, C. Z.

AU - Zhang, Yong-Hang

PY - 2000/5

Y1 - 2000/5

N2 - Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

AB - Long wavelength GaPAsSb type-I and InGaAs/GaPAsSb type-II active materials for GaAs based optoelectronic devices are proposed. Low temperature photoluminescence emission at 1.25 μm is observed from the type-I GaPAsSb quantum well. Room temperature photoluminescence at 1.2-1.5 μm is observed from the type-II quantum wells. Increasing the Sb to P ratio in the GaPAsSb layer extends the emission wavelength. During GaPAsSb deposition, the reflection high energy electron diffraction peak is extended parallel to the surface, while its width perpendicular to the surface is narrow, indicating that spontaneous lateral composition modulation occurs.

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Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

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