Abstract
Limitations to the range of ballistic transport in semiconductors are discussed on the basis of electron correlation within an ensemble. It is shown that transport equations, correct in the fast transient regime, include these correlation effects.
Original language | English (US) |
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Pages (from-to) | 228-230 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 2 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1981 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering