Abstract
We report the observation of electronic light scattering in photoexcited parabolic GaAsAlxGa1-xAs quantum wells. The spectra show sharp peaks corresponding to transitions between sublevels in the conduction band. The precision of the measurements allows a test of the simple harmonic oscillator model for the energy level structure. The energy gap and alloy composition of the AlxGa1-xAs layers are determined from resonance Raman scattering by optical phonons. We use these results to calculate the conduction band offset Qe. We obtain Qe ∼ 0.7, in agreement with recent experiments in square quantum wells.
Original language | English (US) |
---|---|
Pages (from-to) | 601-605 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 61 |
Issue number | 10 |
DOIs | |
State | Published - Mar 1987 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry