Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers

Jialin Yu, Jilin Xia, Inho Kim, Benjamin L. French, Hanna M. Haverinen, Terry Alford, Ghassan E. Jabbour

Research output: Contribution to journalArticlepeer-review


For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300% when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.% was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiOx. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiOxNy capped devices, which were optimized with light annealing. TiOx capped devices were also evaluated for comparison in this study.

Original languageEnglish (US)
Pages (from-to)3339-3347
Number of pages9
JournalOrganic Electronics
Issue number12
StatePublished - 2013


  • Interfacial layer
  • Light anneal
  • Nitrogen doped titanium oxide
  • Photocatalytic activity
  • Quantum dot solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • General Chemistry
  • Electrical and Electronic Engineering
  • Biomaterials


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