Abstract
Electrical characteristics of silicon light emitting devices are changed in similar ways by X-irradiation and hot carrier stresses. Extended hot carrier stress alone causes coalescence of light emission consistent with junction-localized boron passivation by liberated hydrogen. Optical characterization studies demonstrate the formation of junction micro-environments under hot carrier stress.
Original language | English (US) |
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Pages (from-to) | 1804-1808 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 46 |
Issue number | 6 PART 1 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering