Lattice imaging of faulted dipoles in silicon

John Spence; H. Kolar

doi:10.1080/01418617908239275

Lattice imaging of faulted dipoles in silicon

John Spence, H. Kolar

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm⁻² for the stacking-fault energy in silicon.

Original language	English (US)
Pages (from-to)	59-63
Number of pages	5
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	39
Issue number	1
DOIs	https://doi.org/10.1080/01418617908239275
State	Published - Jan 1979

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Science(all)
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

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10.1080/01418617908239275

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title = "Lattice imaging of faulted dipoles in silicon",

abstract = "A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon.",

author = "John Spence and H. Kolar",

note = "Funding Information: This work was supported by NSF grant number DMR77-22853. The authors are grateful to Dr. S. Mahajan for providing bulk specimens (prepared in Professor Haasen{\textquoteright}s laboratory) and, in particular, to Dr. A. Winter for suggesting the use of these specimens for lattice imaging. Technical assist,anee from Mr. J. Wheatley and useful discussion with Professor J. M. Cowley and Dr. M. O{\textquoteright}Keefe are also acknowledged.",

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AU - Kolar, H.

N1 - Funding Information: This work was supported by NSF grant number DMR77-22853. The authors are grateful to Dr. S. Mahajan for providing bulk specimens (prepared in Professor Haasen’s laboratory) and, in particular, to Dr. A. Winter for suggesting the use of these specimens for lattice imaging. Technical assist,anee from Mr. J. Wheatley and useful discussion with Professor J. M. Cowley and Dr. M. O’Keefe are also acknowledged.

PY - 1979/1

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N2 - A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon.

AB - A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon.

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Lattice imaging of faulted dipoles in silicon

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