Abstract
We report the results of modeling lateral p-n junctions and p-n-p quantum wire structures at corrugated GaAs/AlGaAs interfaces, using the surface orientation dependent amphoteric nature of Si doping. We determine the potential landscape and the electron and hole charge densities within a semiclassical Thomas-Fermi screening model, and then solve the two-dimensional Schrödinger equation using finite elements for the quantized electron and hole states at the heterointerfaces. We demonstrate the formation of a one-dimensional electron system confined between two lateral p-n junctions, and discuss the advantages of this structure compared to conventional electrostatic confinement schemes for fabricating quantum wires.
Original language | English (US) |
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Pages (from-to) | 1823-1825 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 15 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)