Kinetics of amorphous silicon dissolution into aluminum layers

P. K. Shetty, N. D. Theodore, J. W. Mayer, Terry Alford

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This study investigates the temperature dependence of the formation of pores in amorphous silicon films for potential application with flexible polymer substrates. An 800 nm layer of amorphous silicon (a-Si) was deposited on a silicon dioxide/silicon (SiO2/Si) substrate followed by a 20 nm layer of aluminum (Al). Samples were annealed in a vacuum anneal furnace at temperatures between 300 and 600 °C, and were then analyzed using X-ray diffraction (XRD). Pore depths were measured using cross-section transmission electron microscopy (XTEM), and an activation energy (EA) of 0.57 eV was derived for pore formation.

Original languageEnglish (US)
Pages (from-to)490-493
Number of pages4
JournalMaterials Letters
Issue number4
StatePublished - Feb 2006


  • Aluminum induced crystallization
  • XTEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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