IVA-4 Dramatic Enhancement In The Gain of AlGaAs/GaAs Heterostructure Bipolar Transistors by Surface Passivation

R. N. Nottenburg, C. J. Sandroff, B. J. Skromme, J. C. Bischoff, R. Bhat

Research output: Contribution to journalArticlepeer-review

Original languageEnglish (US)
Pages (from-to)2370
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - Nov 1987
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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