Is dual gate device structure better from thermal perspective?

Stephen Goodnick; Dragica Vasileska; K. Raleva

doi:10.1109/SISPAD.2008.4648253

Is dual gate device structure better from thermal perspective?

Stephen Goodnick, Dragica Vasileska, K. Raleva

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate device structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.

Original language	English (US)
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages	125-128
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2008.4648253
State	Published - 2008
Event	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan Duration: Sep 9 2008 → Sep 11 2008

Other

Other	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
Country/Territory	Japan
City	Hakone
Period	9/9/08 → 9/11/08

Keywords

DG devices
Heating effects
Hot phonons
Particle-based simulations

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2008.4648253

Cite this

Goodnick, S , Vasileska, D & Raleva, K 2008, Is dual gate device structure better from thermal perspective? in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 4648253, pp. 125-128, 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, Hakone, Japan, 9/9/08. https://doi.org/10.1109/SISPAD.2008.4648253

@inproceedings{7e46b8c965564b39b9c0726adaddc537,

title = "Is dual gate device structure better from thermal perspective?",

abstract = "Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate device structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.",

keywords = "DG devices, Heating effects, Hot phonons, Particle-based simulations",

author = "Stephen Goodnick and Dragica Vasileska and K. Raleva",

year = "2008",

doi = "10.1109/SISPAD.2008.4648253",

language = "English (US)",

pages = "125--128",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

note = "2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 ; Conference date: 09-09-2008 Through 11-09-2008",