In this paper, the susceptibility of oxide-based resistive switching random memory (RRAM) to heavy ion strikes is investigated. A physics-based SPICE model calibrated with HfOx RRAM is employed for circuit and array-level simulations. The RRAM state-flipping is attributed to the transient photocurrents at neighboring transistors. Single-bit-upset (SBU) caused by either single-event upset (SEU) or multiple-event upset (MEU) is modeled and simulated in the one-transistor and one-resistor (1T1R) array, which corroborates with experimental observations. In addition, circuit simulation is performed to investigate the impact of transient-induced soft errors in a 1024 × 1024 crossbar array. The sensitive locations in crossbar arrays are the driver circuits at the edge of the array. The simulations show that the crossbar array with HfOx RRAM is of high radiation tolerance thanks to the V/2 bias scheme. However, multiple-bit upset (MBU) may occur if using other oxide materials with lower operation voltage. Voltage spikes generated at the edge of the array may propagate along rows or columns as there is no isolation between cells in the crossbar array.

Original languageEnglish (US)
Article number7274484
Pages (from-to)2294-2301
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number5
StatePublished - Oct 1 2015


  • 1T1R
  • Crossbar
  • multiple-bit upset
  • multiple-event upset
  • radiation effects
  • resistive switch random memory (RRAM)
  • single-bit upset
  • single-event upset
  • soft error

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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