TY - JOUR
T1 - Investigation of localized electric field in the type-II InAs/GaAsSb/GaAs structure
AU - Lee, S. H.
AU - Kim, J. S.
AU - Yoon, S.
AU - Kim, Y.
AU - Lee, S. J.
AU - Honsberg, Christiana
N1 - Funding Information:
This study was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) and funded by the Ministry of Education (2014R1A6A1031189). This study was supported by a 2013 Yeungnam University Research grant.
PY - 2016/11
Y1 - 2016/11
N2 - The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (Eg) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
AB - The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (Eg) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
UR - http://www.scopus.com/inward/record.url?scp=84998631660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84998631660&partnerID=8YFLogxK
U2 - 10.12693/APhysPolA.130.1213
DO - 10.12693/APhysPolA.130.1213
M3 - Article
AN - SCOPUS:84998631660
SN - 0587-4246
VL - 130
SP - 1213
EP - 1216
JO - Acta Physica Polonica A
JF - Acta Physica Polonica A
IS - 5
ER -