Abstract
We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon Raman scattering in GaAs can be quantitatively separated by investigating interference effects between allowed and forbidden LO-phonon scattering. We perform a new calculation of impurity-induced scattering and determine the resonance profile for GaAs near the E00 gap. Comparison with experiment shows that impurity-induced scattering plays a dominant role. Absolute values of the Raman efficiencies are estimated and compared with experiment.
Original language | English (US) |
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Pages (from-to) | 3696-3704 |
Number of pages | 9 |
Journal | Physical Review B |
Volume | 31 |
Issue number | 6 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics