Interfacial reactions of copper/refractory alloy and bilayer films on SiO
            2

R. L. Spreitzer; S. A. Rafalski; D. Adams; S. W. Russell; Z. Atzmon; J. Li; Terry Alford; J. W. Mayer

Interfacial reactions of copper/refractory alloy and bilayer films on SiO ₂

R. L. Spreitzer, S. A. Rafalski, D. Adams, S. W. Russell, Z. Atzmon, J. Li, Terry Alford, J. W. Mayer

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We studied interfacial phase formation between copper and copper-alloy films on SiO ₂ in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO ₂ were annealed from 400-600°C for 30 min in an N ₂ + H ₂ (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	631-636
Number of pages	6
Volume	337
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

Other

Other	Proceedings of the 1994 MRS Spring Meeting
City	San Francisco, CA, USA
Period	4/4/94 → 4/8/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Spreitzer, RL, Rafalski, SA, Adams, D, Russell, SW, Atzmon, Z, Li, J, Alford, T & Mayer, JW 1994, Interfacial reactions of copper/refractory alloy and bilayer films on SiO ₂ in Materials Research Society Symposium - Proceedings. vol. 337, Materials Research Society, pp. 631-636, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/4/94.

@inproceedings{19b4311850964e4aa4c3d66bf3f9ac81,

title = "Interfacial reactions of copper/refractory alloy and bilayer films on SiO 2 ",

abstract = "We studied interfacial phase formation between copper and copper-alloy films on SiO 2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO 2 were annealed from 400-600°C for 30 min in an N 2 + H 2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling. ",

author = "Spreitzer, {R. L.} and Rafalski, {S. A.} and D. Adams and Russell, {S. W.} and Z. Atzmon and J. Li and Terry Alford and Mayer, {J. W.}",

year = "1994",

language = "English (US)",

volume = "337",

pages = "631--636",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

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TY - GEN

T1 - Interfacial reactions of copper/refractory alloy and bilayer films on SiO 2

AU - Spreitzer, R. L.

AU - Rafalski, S. A.

AU - Adams, D.

AU - Russell, S. W.

AU - Atzmon, Z.

AU - Li, J.

AU - Alford, Terry

AU - Mayer, J. W.

PY - 1994

Y1 - 1994

N2 - We studied interfacial phase formation between copper and copper-alloy films on SiO 2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO 2 were annealed from 400-600°C for 30 min in an N 2 + H 2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.

AB - We studied interfacial phase formation between copper and copper-alloy films on SiO 2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO 2 were annealed from 400-600°C for 30 min in an N 2 + H 2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.

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UR - http://www.scopus.com/inward/citedby.url?scp=0028601470&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028601470

VL - 337

SP - 631

EP - 636

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Interfacial reactions of copper/refractory alloy and bilayer films on SiO ₂

Abstract

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ASJC Scopus subject areas

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