Interface atomic arrangement between the nitride semiconductor and silicon

Keyphrases

• Atomic Arrangement 100%
• GaN Epilayer 100%
• Nitride Semiconductors 100%
• Lattice Mismatch 33%
• Microstructure 33%
• Low Temperature 33%
• Growth Form 33%
• Misfit Dislocation 33%
• Silicon Substrate 33%
• Periodic Array 33%
• Threading Dislocation Density 33%
• Substrate Temperature 33%
• Nucleation Layer 33%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 33%
• AlN nucleation Layer 33%
• Specular Surface 33%
• Main Layer 33%
• Two-dimensional Growth 33%

Material Science

• Silicon 100%
• Epilayers 100%
• Nitride Semiconductor 100%
• Nucleation 66%
• Density 33%
• Lattice Mismatch 33%
• Dislocation (Crystal) 33%
• Aluminum Nitride 33%
• Silicon Substrate 33%