Integrity of III-V heterojunction interfaces under gamma irradiation

S. Subramanian, A. Sarkar, L. Ungier, S. M. Goodnick

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements.

Original languageEnglish (US)
Pages (from-to)1862-1869
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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