Initial stages of epitaxial growth of GaAs on (100) silicon

D. K. Biegelsen, F. A. Ponce, A. J. Smith, J. C. Tramontana

Research output: Contribution to journalArticlepeer-review

123 Scopus citations


Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.

Original languageEnglish (US)
Pages (from-to)1856-1859
Number of pages4
JournalJournal of Applied Physics
Issue number5
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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