InGaN based solar cells with GaN tunnel junction contacts

Ehsan Vadiee; Evan A. Clinton; Heather McFavilen; Zachary Engel; Christopher Matthews; Chantal Arena; Christiana Honsberg; Stephen Goodnick; William A. Doolittle

doi:10.1109/PVSC.2018.8547327

InGaN based solar cells with GaN tunnel junction contacts

Ehsan Vadiee, Evan A. Clinton, Heather McFavilen, Zachary Engel, Christopher Matthews, Chantal Arena, Christiana Honsberg, Stephen Goodnick, William A. Doolittle

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10 ^-9 mA/cm2, an open-circuit voltage (VOC) of ∼2.2 V, and short circuit-current density (JSC) of ∼0.9 mA/cm ² . Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	965-968
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547327
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

Epitaxial layers
high hole concentration
indium gallium nitride
single-junction solar cell
tunnel junction

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547327

Cite this

Vadiee, E., Clinton, E. A., McFavilen, H., Engel, Z., Matthews, C., Arena, C., Honsberg, C., Goodnick, S., & Doolittle, W. A. (2018). InGaN based solar cells with GaN tunnel junction contacts. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 965-968). Article 8547327 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547327

InGaN based solar cells with GaN tunnel junction contacts. / Vadiee, Ehsan; Clinton, Evan A.; McFavilen, Heather et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 965-968 8547327 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vadiee, E, Clinton, EA, McFavilen, H, Engel, Z, Matthews, C, Arena, C, Honsberg, C , Goodnick, S & Doolittle, WA 2018, InGaN based solar cells with GaN tunnel junction contacts. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547327, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 965-968, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547327

Vadiee E, Clinton EA, McFavilen H, Engel Z, Matthews C, Arena C et al. InGaN based solar cells with GaN tunnel junction contacts. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 965-968. 8547327. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547327

Vadiee, Ehsan ; Clinton, Evan A. ; McFavilen, Heather et al. / InGaN based solar cells with GaN tunnel junction contacts. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 965-968 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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title = "InGaN based solar cells with GaN tunnel junction contacts",

abstract = " InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10 -9 mA/cm2, an open-circuit voltage (VOC) of ∼2.2 V, and short circuit-current density (JSC) of ∼0.9 mA/cm 2 . Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.",

keywords = "Epitaxial layers, high hole concentration, indium gallium nitride, single-junction solar cell, tunnel junction",

author = "Ehsan Vadiee and Clinton, {Evan A.} and Heather McFavilen and Zachary Engel and Christopher Matthews and Chantal Arena and Christiana Honsberg and Stephen Goodnick and Doolittle, {William A.}",

note = "Funding Information: The information presented herein was funded in part by the Advanced Research Projects Agency Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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AU - Vadiee, Ehsan

AU - Clinton, Evan A.

AU - McFavilen, Heather

AU - Engel, Zachary

AU - Matthews, Christopher

AU - Arena, Chantal

AU - Honsberg, Christiana

AU - Goodnick, Stephen

AU - Doolittle, William A.

N1 - Funding Information: The information presented herein was funded in part by the Advanced Research Projects Agency Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: © 2018 IEEE.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10 -9 mA/cm2, an open-circuit voltage (VOC) of ∼2.2 V, and short circuit-current density (JSC) of ∼0.9 mA/cm 2 . Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.

AB - InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10 -9 mA/cm2, an open-circuit voltage (VOC) of ∼2.2 V, and short circuit-current density (JSC) of ∼0.9 mA/cm 2 . Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.

KW - Epitaxial layers

KW - high hole concentration

KW - indium gallium nitride

KW - single-junction solar cell

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ER -

InGaN based solar cells with GaN tunnel junction contacts

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Keywords

ASJC Scopus subject areas

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