InGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy with a variation in deposition temperature among the samples to change crystal and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep = 505°C was found for 20% In composition. The density of 60° dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection. Elevated deposition temperatures led to In decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering, as well as a growth surface instability against perturbations.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages6
ISBN (Electronic)9781479943982
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014


Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States


  • InGaAs
  • MBE
  • MQW Solar Cells
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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