TY - JOUR
T1 - Influence of substrate temperature on properties of pyrite thin films deposited using a sequential coevaporation technique
AU - Walimbe, A.
AU - Wertheim, A.
AU - Ravi, A.
AU - Kopas, Cameron
AU - Saxena, A.
AU - Singh, Rakesh
AU - Lehner, S. W.
AU - Domenico, John
AU - Makar, James
AU - Carpenter, Ray
AU - Buseck, P R
AU - Newman, Nathan
N1 - Funding Information:
The use of facilities in the LeRoy Eyring Center for Solid State Science at Arizona State University is acknowledged. This work was supported by the Technology Research Initiative Funds (TRIF) fund at ASU. We also thank Prof. Zack Holman and Salman Manzoor for assisting with the optical measurements, Thomas Chamberlin with helping with the machine shop drawings, and Professors Sefaattin Tongay and Anupum Pant for assisting with the Raman spectroscopy measurements. We also thank Prof. Richard King, Prof. Mark van Schilfgaarde, and Prof. Subhash Mahajan for helpful discussions.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - A series of pyrite thin films were deposited in-situ in a monolayer-by-monolayer fashion using sequential evaporation of iron under high vacuum, followed by sulfidation at a sulfur pressure of 133 Pa, as a function of substrate temperature. The stoichiometry, crystallinity, topographic smoothness, and phase purity of the deposited pyrite thin films improve with increasing substrate temperature up to 420 °C, the highest temperature studied. Characterization of the films deposited at 420 °C using selected-area precession electron diffraction, Raman Spectroscopy, and conventional X-ray diffraction indicated that the pyrite layer is phase pure, with no evidence of a secondary marcasite phase, and grew in columnar grains with a preferential (100) orientation on the (100) silicon substrates. This novel sequential evaporation technique has the potential to make useful low-cost semiconducting pyrite materials for large-area electronic applications.
AB - A series of pyrite thin films were deposited in-situ in a monolayer-by-monolayer fashion using sequential evaporation of iron under high vacuum, followed by sulfidation at a sulfur pressure of 133 Pa, as a function of substrate temperature. The stoichiometry, crystallinity, topographic smoothness, and phase purity of the deposited pyrite thin films improve with increasing substrate temperature up to 420 °C, the highest temperature studied. Characterization of the films deposited at 420 °C using selected-area precession electron diffraction, Raman Spectroscopy, and conventional X-ray diffraction indicated that the pyrite layer is phase pure, with no evidence of a secondary marcasite phase, and grew in columnar grains with a preferential (100) orientation on the (100) silicon substrates. This novel sequential evaporation technique has the potential to make useful low-cost semiconducting pyrite materials for large-area electronic applications.
KW - Electronic material
KW - Large area deposits
KW - Photovoltaic material
KW - Physical vapor deposition
KW - Semiconducting iron pyrite
KW - Sequential vapor deposition
KW - Thin film growth
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U2 - 10.1016/j.tsf.2018.10.022
DO - 10.1016/j.tsf.2018.10.022
M3 - Article
AN - SCOPUS:85055467884
SN - 0040-6090
VL - 669
SP - 49
EP - 55
JO - Thin Solid Films
JF - Thin Solid Films
ER -