Abstract
Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H 2 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.
Original language | English (US) |
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Pages (from-to) | 419-428 |
Number of pages | 10 |
Journal | Journal of Electronic Materials |
Volume | 40 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2011 |
Keywords
- Ga-doped ZnO
- Transparent conductive oxide
- optoelectronics
- pulsed laser deposition
- solar cells
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry