Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001) was discussed. Ultraviolet photoelectron emission microscopy was employed to study the real time growth process of individual erbium silicide nanostructures on Si(001) surfaces at temperatures up to 1050 °C. A temperature regime was indicated by the results obtained where island growth is mainly governed by surface diffusion of the deposited Er adatoms and a higher temperature regime where Ostwald ripening contributes to the island morphology.
ASJC Scopus subject areas
- Physics and Astronomy(all)