Influence of interfacial copper on the Ti-SiO 2 reaction during nitridation of Cu-Ti films

Daniel Adams, Terry Alford, N. D. Theodore, T. Laursen, S. W. Russell, M. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO 2 and annealed in an NH 3 ambient at temperatures 400-700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO 2 interface. At the surface Ti reacted with NH 3 to form TiN, whereas at the interface the Ti reacted with the SiO 2 to form a TiO/Ti 5Si 3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the SiO 2 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu 2O component has a catalytic effect on the Ti- SiO 2 reaction.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995


OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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