Influence of interfacial copper during the dealloying and nitridation of Cu-Ti films

Terry Alford, Daniel Adams, N. D. Theodore, T. Laursen, M. J. Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Cu(Ti 27 at.%) alloy and Cu(90 nm) /Ti(20 nm) bilayer films were deposited on thermally grown silicon-dioxide and dealloyed under thermal treatment at temperatures 400-700°C for 30 min in an ammonia ambient. During annealing Ti segregated to both the free surface and the alloy/SiO2 interface. At the interface the Ti dissociated the SiO2 and reacted with the freed Si and O to form a TiO/Ti5Si3 structure. High-resolution energy dispersive X-ray technique revealed the presence of interfacial copper between the Ti-silicide and Ti-oxide layers. The interfacial copper did not reduce the reaction temperature. Nevertheless it was associated with the enhanced dissociation of SiO2. The data suggested that in the presence of the interfacial copper, the rate of oxide consumption is increased by a factor of 3 to 4. The enhancement of the oxide consumption was observed at temperatures between 450 and 600°C. It is believed that the higher reaction rate is due to a catalytic effect exhibited by the interfacial Cu when it exists in the form of Cu2O.

Original languageEnglish (US)
Pages (from-to)248-251
Number of pages4
JournalMaterials Chemistry and Physics
Issue number2-3
StatePublished - Nov 1996


  • Dealloying
  • Interfacial copper
  • Nitridation

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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