InAsBi Materials

Arvind J. Shalindar; Preston T. Webster; Stephen T. Schaefer; Shane R. Johnson

doi:10.1016/B978-0-12-812136-8.00009-8

InAsBi Materials

Arvind J. Shalindar, Preston T. Webster, Stephen T. Schaefer, Shane R. Johnson

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Scopus citations

Abstract

The conditions for molecular beam epitaxy growth of InAsBi are explored for optoelectronic applications. X-ray diffraction measurements of thick InAsBi on GaSb samples show a diffraction sideband near the main (004) diffraction peak, indicating lateral variation of Bi mole fraction in the layer. By modeling the main and sideband diffraction peaks, the average InAsBi unstrained lattice constant is determined. By comparing these results with the Bi mole fraction for each sample determined using random Rutherford backscattering, the lattice constant of zinc blende InBi is determined to be 6.6107Å. The bandgap of InAsBi is expressed as a function of the Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529eV between Bi impurity state and the InAs valence band. A software tool is programmed to identify optimal InAs/InAsBi and GaSb/InAsBi superlattice designs with maximum electron-hole wavefunction overlap as a function of transition energy.

Original language	English (US)
Title of host publication	Molecular Beam Epitaxy
Subtitle of host publication	from Research to Mass Production
Publisher	Elsevier
Pages	181-196
Number of pages	16
ISBN (Electronic)	9780128121368
ISBN (Print)	9780128121375
DOIs	https://doi.org/10.1016/B978-0-12-812136-8.00009-8
State	Published - Jan 1 2018
Externally published	Yes

Keywords

bandgap
bismuth
bulk
InAsBi
lattice constant
superlattice

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/B978-0-12-812136-8.00009-8

Cite this

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title = "InAsBi Materials",

abstract = "The conditions for molecular beam epitaxy growth of InAsBi are explored for optoelectronic applications. X-ray diffraction measurements of thick InAsBi on GaSb samples show a diffraction sideband near the main (004) diffraction peak, indicating lateral variation of Bi mole fraction in the layer. By modeling the main and sideband diffraction peaks, the average InAsBi unstrained lattice constant is determined. By comparing these results with the Bi mole fraction for each sample determined using random Rutherford backscattering, the lattice constant of zinc blende InBi is determined to be 6.6107{\AA}. The bandgap of InAsBi is expressed as a function of the Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529eV between Bi impurity state and the InAs valence band. A software tool is programmed to identify optimal InAs/InAsBi and GaSb/InAsBi superlattice designs with maximum electron-hole wavefunction overlap as a function of transition energy.",

keywords = "bandgap, bismuth, bulk, InAsBi, lattice constant, superlattice",

author = "Shalindar, {Arvind J.} and Webster, {Preston T.} and Schaefer, {Stephen T.} and Johnson, {Shane R.}",

year = "2018",

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doi = "10.1016/B978-0-12-812136-8.00009-8",

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T1 - InAsBi Materials

AU - Shalindar, Arvind J.

AU - Webster, Preston T.

AU - Schaefer, Stephen T.

AU - Johnson, Shane R.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The conditions for molecular beam epitaxy growth of InAsBi are explored for optoelectronic applications. X-ray diffraction measurements of thick InAsBi on GaSb samples show a diffraction sideband near the main (004) diffraction peak, indicating lateral variation of Bi mole fraction in the layer. By modeling the main and sideband diffraction peaks, the average InAsBi unstrained lattice constant is determined. By comparing these results with the Bi mole fraction for each sample determined using random Rutherford backscattering, the lattice constant of zinc blende InBi is determined to be 6.6107Å. The bandgap of InAsBi is expressed as a function of the Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529eV between Bi impurity state and the InAs valence band. A software tool is programmed to identify optimal InAs/InAsBi and GaSb/InAsBi superlattice designs with maximum electron-hole wavefunction overlap as a function of transition energy.

AB - The conditions for molecular beam epitaxy growth of InAsBi are explored for optoelectronic applications. X-ray diffraction measurements of thick InAsBi on GaSb samples show a diffraction sideband near the main (004) diffraction peak, indicating lateral variation of Bi mole fraction in the layer. By modeling the main and sideband diffraction peaks, the average InAsBi unstrained lattice constant is determined. By comparing these results with the Bi mole fraction for each sample determined using random Rutherford backscattering, the lattice constant of zinc blende InBi is determined to be 6.6107Å. The bandgap of InAsBi is expressed as a function of the Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529eV between Bi impurity state and the InAs valence band. A software tool is programmed to identify optimal InAs/InAsBi and GaSb/InAsBi superlattice designs with maximum electron-hole wavefunction overlap as a function of transition energy.

KW - bandgap

KW - bismuth

KW - bulk

KW - InAsBi

KW - lattice constant

KW - superlattice

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SN - 9780128121375

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EP - 196

BT - Molecular Beam Epitaxy

PB - Elsevier

ER -

InAsBi Materials

Abstract

Keywords

ASJC Scopus subject areas

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