In situ X-ray measurements of MOVPE growth of inxGa 1-xN single quantum wells

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


GaN/InxGa1-xN/GaN single quantum wells (SQWs) have been grown on c-plane GaN/sapphire substrates using MOVPE system. PL (photoluminescence) and AFM (atomic force microscope) measurements demonstrate good quality of after-growth thermal-annealed SQWs. In situ XRD (X-ray diffraction), XRR (X-ray reflectivity), and X-ray CTR (crystal truncation rod) scattering measurements were successfully conducted on the SQWs under the NH3+N2 ambient at 1103 K. The analysis results of the XRR and the X-ray CTR spectra at 1103 K and at 300 K on the same sample matched well. It demonstrated that In0.09Ga0.91N SQW structure with several ML (monolayer) InGaN thicknesses was successfully investigated using the XRR and CTR scattering measurements at 1103 K.

Original languageEnglish (US)
Pages (from-to)36-41
Number of pages6
JournalJournal of Crystal Growth
StatePublished - May 1 2013


  • A1. In situ
  • A1. X-ray crystal truncation rod
  • A1. X-ray reflectivity
  • A3. Metalorganic vapor phase epitaxy
  • B2. Semiconducting III-N materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'In situ X-ray measurements of MOVPE growth of inxGa 1-xN single quantum wells'. Together they form a unique fingerprint.

Cite this