In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

J. L. Taggart; W. Chen; Yago Gonzalez Velo; Hugh Barnaby; Keith Holbert; Michael Kozicki

doi:10.1109/TNS.2017.2779860

In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

J. L. Taggart, W. Chen, Yago Gonzalez Velo, Hugh Barnaby, Keith Holbert, Michael Kozicki

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Cu-SiO₂ and Ag-Ge₃₀Se₇₀ conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during ⁶⁰Co irradiation. DC current-voltage ( I - V ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ I - V measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

Original language	English (US)
Article number	8141957
Pages (from-to)	192-199
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	65
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2017.2779860
State	Published - Jan 2018

Keywords

Chalcogenide glass
PMC
ReRAM
conductive bridging
conductive bridging random access memory (CBRAM)
dose effects
electrochemical metallization (ECM)
ionizing radiation
memristors
nanoionic memory
programmable metallization cell
radiation effects
resistive switching
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2017.2779860

Cite this

@article{83d9b1b5cf784f43a40508f8e8ef4441,

title = "In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment",

abstract = "Cu-SiO2 and Ag-Ge30Se70 conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage ( I - V ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ I - V measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.",

keywords = "Chalcogenide glass, PMC, ReRAM, conductive bridging, conductive bridging random access memory (CBRAM), dose effects, electrochemical metallization (ECM), ionizing radiation, memristors, nanoionic memory, programmable metallization cell, radiation effects, resistive switching, total ionizing dose (TID)",

author = "Taggart, {J. L.} and W. Chen and {Gonzalez Velo}, Yago and Hugh Barnaby and Keith Holbert and Michael Kozicki",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = jan,

doi = "10.1109/TNS.2017.2779860",

language = "English (US)",

volume = "65",

pages = "192--199",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

AU - Taggart, J. L.

AU - Chen, W.

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Holbert, Keith

AU - Kozicki, Michael

PY - 2018/1

Y1 - 2018/1

N2 - Cu-SiO2 and Ag-Ge30Se70 conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage ( I - V ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ I - V measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

AB - Cu-SiO2 and Ag-Ge30Se70 conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage ( I - V ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ I - V measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

KW - Chalcogenide glass

KW - PMC

KW - ReRAM

KW - conductive bridging

KW - conductive bridging random access memory (CBRAM)

KW - dose effects

KW - electrochemical metallization (ECM)

KW - ionizing radiation

KW - memristors

KW - nanoionic memory

KW - programmable metallization cell

KW - radiation effects

KW - resistive switching

KW - total ionizing dose (TID)

UR - http://www.scopus.com/inward/record.url?scp=85037625419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85037625419&partnerID=8YFLogxK

U2 - 10.1109/TNS.2017.2779860

DO - 10.1109/TNS.2017.2779860

M3 - Article

AN - SCOPUS:85037625419

SN - 0018-9499

VL - 65

SP - 192

EP - 199

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 1

M1 - 8141957

ER -

In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this