In situ electron holographic analysis of biased Si n+ -p junctions

Myung Geun Han, David Smith, Martha McCartney

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


The two-dimensional electrostatic potential distribution across Si n+ -p junctions over a range of positive and negative biasing conditions has been studied in situ using off-axis electron holography. A sample holder with a movable probe as the electrode was used to bias focused-ion-beam-milled membranes during hologram acquisition. Reverse biasing of the junction resulted in an increase in potential across the junction, whereas the junction potential decreased with forward bias and eventually completely disappeared. The trends of the experimental results matched reasonably well with computer simulations.

Original languageEnglish (US)
Article number143502
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 21 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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