In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation

Q. Y. Wei, T. Li, Z. H. Wu, Fernando Ponce

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The total polarization fields of pseudomorphic In xGa 1-xN/GaN and Al xGa 1-xN/GaN heterostructures with 0≤x≤0.4 have been calculated as a function of the crystal orientation. Especial attention is placed on the direction and magnitude of in-plane piezoelectric polarization, which is not negligible for the nonpolar and semi-polar growth. For an arbitrary crystal orientation, the piezoelectric polarization prevails in the InGaN/GaN system while the spontaneous polarization prevails in the AlGaN/GaN system. The in-plane potential due to polarization fields in non-polar epilayers is found to depend on the degree of planarity of the heterojunctions, and on the respective lateral dimensions.

Original languageEnglish (US)
Pages (from-to)2226-2232
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number10
StatePublished - Oct 2010


  • III-V semiconductors
  • Non-polar growth
  • Piezoelectric polarization
  • Spontaneous polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation'. Together they form a unique fingerprint.

Cite this