Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs

Jeomoh Kim, Mi Hee Ji, Zachary Lochner, Suk Choi, Nordine Sebkhi, Jianping Liu, Md M. Satter, Jin Soo Kim, P. Douglas Yoder, Russell D. Dupuis, Reid Juday, Alec M. Fischer, Fernando Ponce, Jae Hyun Ryou

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Studied is the effect of indium (In) mole fraction in xGa 1-xN:Mg layers with 0≤ xIn≤0.035 on hole injection and transport behaviors in InGaN/GaN multiple quantum wells (MQWs) using dual-wavelength and triple-wavelength active regions. Electro-optical characteristics of light-emitting diodes containing p-layers with different In content and with silicon doping in selected QW barriers (QWBs) are compared to evaluate hole transport in the active region. The results show that enhanced hole transport and corresponding more uniform distribution of holes across the MQW region are achieved by increasingx In in the p-Inx Ga1-x N: Mg layer, possibly due to modification in energy of holes by a potential barrier between the p-InGaN and GaN QWB.

Original languageEnglish (US)
Article number6572864
Pages (from-to)1789-1792
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number18
StatePublished - 2013


  • Epitaxial growth
  • light emitting diodes
  • luminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs'. Together they form a unique fingerprint.

Cite this