Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

Ashwin Ashok; Dragica Vasileska; Stephen Goodnick; Olin L. Hartin

doi:10.1109/TED.2009.2015822

Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

Ashwin Ashok, Dragica Vasileska, Stephen Goodnick, Olin L. Hartin

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

Original language	English (US)
Pages (from-to)	998-1006
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	5
DOIs	https://doi.org/10.1109/TED.2009.2015822
State	Published - 2009

Keywords

GaN devices
Gate-voltage dependence
Polarization charge

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2015822

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abstract = "We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.",

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T1 - Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

AU - Ashok, Ashwin

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Hartin, Olin L.

PY - 2009

Y1 - 2009

N2 - We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

AB - We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

KW - GaN devices

KW - Gate-voltage dependence

KW - Polarization charge

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SP - 998

EP - 1006

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

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