Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer

W. Chen; Hugh Barnaby; Michael Kozicki

doi:10.1109/LED.2016.2542239

Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO₂ Switching Layer

W. Chen, Hugh Barnaby, Michael Kozicki

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this letter, the impedance behavior of Cu-SiO₂ programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.

Original language	English (US)
Article number	7433974
Pages (from-to)	576-579
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/LED.2016.2542239
State	Published - May 2016

Keywords

CBRAM
Cu
PMC
equivalent circuit
impedance spectroscopy
non-volatile memory
resistive switching
silicon dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2016.2542239

Cite this

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title = "Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer",

abstract = "In this letter, the impedance behavior of Cu-SiO2 programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.",

keywords = "CBRAM, Cu, PMC, equivalent circuit, impedance spectroscopy, non-volatile memory, resistive switching, silicon dioxide",

author = "W. Chen and Hugh Barnaby and Michael Kozicki",

note = "Funding Information: This work was supported in part by the Defense Threat Reduction Agency under Grant HDTRA1-11-1-0055 and in part by the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-15-1-0080. The authors would like to thank Dr. Jacob Calkins of DTRA and Dr. Art Edwards of AFRL for their support of this work. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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PY - 2016/5

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N2 - In this letter, the impedance behavior of Cu-SiO2 programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.

AB - In this letter, the impedance behavior of Cu-SiO2 programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.

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KW - impedance spectroscopy

KW - non-volatile memory

KW - resistive switching

KW - silicon dioxide

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