Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes

Engineering & Materials Science

• Gallium nitride 100%
• Vapor phase epitaxy 80%
• Diodes 66%
• Hydrides 57%
• Substrates 51%
• Defects 49%
• Bias voltage 45%
• Leakage currents 29%
• Topography 20%
• X rays 16%
• Electric breakdown 10%
• Etching 9%
• Ions 8%
• Macros 8%
• Testing 4%

Physics & Astronomy

• gallium nitrides 84%
• breakdown 56%
• diodes 54%
• vapor phase epitaxy 47%
• hydrides 45%
• defects 40%
• leakage 22%
• electric potential 19%
• topography 16%
• p-i-n diodes 11%
• craters 10%
• electrical faults 8%
• x rays 8%
• voids 7%
• etching 6%
• damage 6%
• ions 4%
• performance 4%

Chemical Compounds

• Vapor Phase Epitaxy 91%
• Nitride 70%
• Hydride 61%
• Leakage Current 57%
• Voltage 42%
• Threading Dislocation 27%
• Surface Damage 21%
• Breakdown Voltage 21%
• Etching 13%
• Molecular Cluster 9%
• Surface 9%
• Ion 5%