TY - GEN
T1 - Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation
AU - Yu, Shimeng
AU - Zhao, Yuning
AU - Du, Gang
AU - Kang, Jinfeng
AU - Han, Ruqi
AU - Liu, Xiaoyan
PY - 2008/12/1
Y1 - 2008/12/1
N2 - 3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20nm FinFETs SRAM's sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAM's stability is most sensitive to the access transistor's fin-thickness variation. Under the worst cases, increasing the pull-down transistor's fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.
AB - 3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20nm FinFETs SRAM's sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAM's stability is most sensitive to the access transistor's fin-thickness variation. Under the worst cases, increasing the pull-down transistor's fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.
UR - http://www.scopus.com/inward/record.url?scp=63249088267&partnerID=8YFLogxK
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U2 - 10.1109/EDSSC.2008.4760701
DO - 10.1109/EDSSC.2008.4760701
M3 - Conference contribution
AN - SCOPUS:63249088267
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -