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Dive into the research topics of 'Impact of single event gate rupture and latent defects on power MOSFETs switching operation'. Together they form a unique fingerprint.- Sort by
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A. Privat, A. D. Touboul, M. Petit, J. J. Huselstein, F. Wrobel, F. Forest, J. R. Vaillé, S. Bourdarie, R. Arinero, N. Chatry, G. Chaumont, E. Lorfèvre, F. Saigné
Research output: Contribution to journal › Article › peer-review