Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

Matthew T. Hardy; Feng Wu; Chia Yen Huang; Yuji Zhao; Daniel F. Feezell; Shuji Nakamura; James S. Speck; Steven P. DenBaars

doi:10.1109/LPT.2013.2288927

Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

Matthew T. Hardy, Feng Wu, Chia Yen Huang, Yuji Zhao, Daniel F. Feezell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

Original language	English (US)
Article number	6655964
Pages (from-to)	43-46
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2013.2288927
State	Published - Jan 1 2014
Externally published	Yes

Keywords

Epitaxial defects
Green laser diodes
Quantum well lasers
Semipolar GaN
Thermal stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2013.2288927

Cite this

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abstract = "Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear {"}as-grown, {"} and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.",

keywords = "Epitaxial defects, Green laser diodes, Quantum well lasers, Semipolar GaN, Thermal stability",

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AU - Hardy, Matthew T.

AU - Wu, Feng

AU - Huang, Chia Yen

AU - Zhao, Yuji

AU - Feezell, Daniel F.

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven P.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

AB - Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

KW - Epitaxial defects

KW - Green laser diodes

KW - Quantum well lasers

KW - Semipolar GaN

KW - Thermal stability

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Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

Abstract

Keywords

ASJC Scopus subject areas

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