Impact of low temperatures (< 125 K) on the total ionizing dose response and ELDRS in gated lateral PNP BJTs

Engineering & Materials Science

• Temperature 60%
• MOS capacitors 59%
• Bipolar transistors 46%
• Protons 45%
• MOSFET devices 44%
• Irradiation 38%
• Thermal effects 38%
• Oxides 32%
• Defects 25%
• Networks (circuits) 20%
• Computer simulation 20%

Physics & Astronomy

• dosage 100%
• junction transistors 41%
• bipolar transistors 32%
• time dependence 28%
• temperature effects 27%
• CMOS 27%
• capacitors 26%
• transistors 24%
• retarding 22%
• protons 19%
• irradiation 19%
• oxides 18%
• defects 16%
• simulation 11%