Impact of alpha particles on the electrical characteristics of TiO 2 memristors

Hugh Barnaby, S. Malley, M. Land, S. Charnicki, A. Kathuria, B. Wilkens, E. Deionno, W. M. Tong

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm - 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

Original languageEnglish (US)
Article number6061922
Pages (from-to)2838-2844
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - Dec 2011


  • Alpha particles
  • TiO
  • displacement damage
  • memristor

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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