Impact ionization rate and high-field transport in ZnS with nonlocal band structure

Martin Reigrotzki; Ronald Redmer; Insook Lee; Shankar S. Pennathur; Manfred Dür; John F. Wager; Stephen M. Goodnick; Peter Vogl; Harald Eckstein; Wolfgang Schattke

doi:10.1063/1.363550

Impact ionization rate and high-field transport in ZnS with nonlocal band structure

Martin Reigrotzki, Ronald Redmer, Insook Lee, Shankar S. Pennathur, Manfred Dür, John F. Wager, Stephen M. Goodnick, Peter Vogl, Harald Eckstein, Wolfgang Schattke

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data: reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials.

Original language	English (US)
Pages (from-to)	5054-5060
Number of pages	7
Journal	Journal of Applied Physics
Volume	80
Issue number	9
DOIs	https://doi.org/10.1063/1.363550
State	Published - Nov 1 1996
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Impact ionization rate and high-field transport in ZnS with nonlocal band structure",

abstract = "The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data: reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials.",

author = "Martin Reigrotzki and Ronald Redmer and Insook Lee and Pennathur, {Shankar S.} and Manfred D{\"u}r and Wager, {John F.} and Goodnick, {Stephen M.} and Peter Vogl and Harald Eckstein and Wolfgang Schattke",

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AU - Reigrotzki, Martin

AU - Redmer, Ronald

AU - Lee, Insook

AU - Pennathur, Shankar S.

AU - Dür, Manfred

AU - Wager, John F.

AU - Goodnick, Stephen M.

AU - Vogl, Peter

AU - Eckstein, Harald

AU - Schattke, Wolfgang

PY - 1996/11/1

Y1 - 1996/11/1

N2 - The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data: reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials.

AB - The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data: reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Impact ionization rate and high-field transport in ZnS with nonlocal band structure

Abstract

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