@inproceedings{3637457242ae4fc69aa13e6563e7a51e,
title = "Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC",
abstract = "Polytypic 3C quantum wells (double Shockley stacking faults) are spontaneously generated during thermal processing of moderately doped 4H-SiC epilayers grown on substrates with heavy n-type doping above ∼3×1019 cm-3. They intersect the wafer surface as straight lines, due to the 8° misorientation of the wafer from the c-axis. We describe observations of electric fields and charge associated with these intersections using electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM). The results are compared to two-dimensional electrostatic simulations.",
author = "Mikhov, {M. K.} and G. Samson and Brian Skromme and R. Wang and C. Li and I. Bhat",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994416",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "937--938",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}