Abstract
This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10% and 20% InGaN films with minimal strain relaxation and defect generation. The characteristics of both large-and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I-V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22% shows a promising photovoltaic response.
Original language | English (US) |
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Article number | 7368076 |
Pages (from-to) | 460-464 |
Number of pages | 5 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2016 |
Keywords
- Heterojunction
- Solar cell
- indium gallium nitride (InGaN)
- molecular beam epitaxy (MBE)
- photovoltaic cell
- semiconductor epitaxial layer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering